Wiring structure, electronic device and method for manufacturing the same

ABSTRACT

A wiring structure includes an insulating layer and a conductive structure. The insulating layer has an upper surface and a lower surface opposite to the upper surface, and defines an opening extending through the insulating layer. The conductive structure is disposed in the opening of the insulating layer, and includes a first barrier layer and a wetting layer. The first barrier layer is disposed on a sidewall of the opening of the insulating layer, and defines a through hole extending through the first barrier layer. The wetting layer is disposed on the first barrier layer. A portion of the wetting layer is exposed from the through hole of the first barrier layer and the lower surface of the insulating layer to form a ball pad.

BACKGROUND 1. Field of the Disclosure

The present disclosure relates to a wiring structure, an electronicdevice and a manufacturing method, and to a wiring structure having aportion of a wetting layer exposed from a barrier layer to form a ballpad, an electronic device including the wiring structure, and a methodfor manufacturing the electronic device.

2. Description of the Related Art

In a package of radio frequency (RF) die, a redistribution layer (RDL)structure can be used to couple with the RF die. Due to impedancematching concerns, such RDL structure can be designed with a structurehaving five passivation layers and five metal layers (5P5M). Amanufacturing process for a structure having one passivation layer andone metal layer (1P1M) can take about 10 days, and thus themanufacturing process for 5P5M structure can have a total manufacturingtime of about 60 days. Thus, the manufacturing cost may be high.Further, such a 5P5M structure has a great thickness, which may readilycause warpage and/or delamination issues.

SUMMARY

In some embodiments, a wiring structure includes an insulating layer anda conductive structure. The insulating layer has an upper surface and alower surface opposite to the upper surface, and defines an openingextending through the insulating layer. The conductive structure isdisposed in the opening of the insulating layer, and includes a firstbarrier layer and a wetting layer. The first barrier layer is disposedon a sidewall of the opening of the insulating layer, and defines athrough hole extending through the first barrier layer. The wettinglayer is disposed on the first barrier layer. A portion of the wettinglayer is exposed from the through hole of the first barrier layer andthe lower surface of the insulating layer to form a ball pad.

In some embodiments, an electronic device includes a first insulatinglayer, a lower conductive structure and at least one electricalconnecting element. The first insulating layer has an upper surface anda lower surface opposite to the upper surface, and defines a firstopening extending through the first insulating layer. The lowerconductive structure includes a lower circuit structure disposed in thefirst opening of the first insulating layer. The lower circuit structureincludes a plurality of metal layers. The lower circuit structureincludes a bonding region and an extending region. An amount of metallayers of the bonding region is different from an amount of metal layersof the extending region. The electrical connecting element is attachedto the bonding region of the lower conductive structure.

In some embodiments, a method for manufacturing an electronic deviceincludes: forming a first opening extending through a first insulatinglayer; forming a lower seed layer in the first opening and on theinsulating layer; forming a first barrier layer, a wetting layer and asecond barrier layer sequentially on the seed layer to form a lowercircuit structure; etching a portion of the first barrier layer toexpose a portion of the wetting layer; and attaching at least oneelectrical connecting element to the exposed portion of the wettinglayer.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are readilyunderstood from the following detailed description when read with theaccompanying figures. It is noted that various structures may not bedrawn to scale, and dimensions of the various structures may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a cross-sectional view of an example of an electronicdevice according to some embodiments of the present disclosure.

FIG. 2 illustrates an enlarged view of an area “A” shown in FIG. 1.

FIG. 3 illustrates a cross-sectional view of an example of an electronicdevice according to some embodiments of the present disclosure.

FIG. 4 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 5 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 6 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 7 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 8 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 9 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 10 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 11 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 12 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 13 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 14 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 15 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 16 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 17 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 18 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 19 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 20 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 21 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 22 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 23 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 24 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 25 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 26 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 27 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 28 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 29 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 30 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 31 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 32 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 33 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

FIG. 34 illustrates one or more stages of an example of a method formanufacturing an electronic device according to some embodiments of thepresent disclosure.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar components.Embodiments of the present disclosure will be readily understood fromthe following detailed description taken in conjunction with theaccompanying drawings.

The following disclosure provides for many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to explain certain aspects of the present disclosure. These are,of course, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed or disposed in direct contact, and mayalso include embodiments in which additional features may be formed ordisposed between the first and second features, such that the first andsecond features may not be in direct contact. In addition, the presentdisclosure may repeat reference numerals and/or letters in the variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between the variousembodiments and/or configurations discussed.

In a package including an RF die, an RDL structure can be used to couplewith the RF die. Due to impedance matching concerns, such an RDLstructure can be designed with a 5P5M structure. A comparativemanufacturing process of such a 5P5M structure includes providing acarrier having a seed layer (or a release metal film) disposed thereon,forming a first passivation layer (P1) with a first through hole on theseed layer, forming a first metal layer (M1) on the P1 and in the firstthrough hole, forming a second passivation layer (P2) with a secondthrough hole on the P1 and covering the Ml, forming a second metal layer(M2) on the P2 and in the second through hole to electrically connectthe Ml, and then sequentially forming a third passivation layer (P3), athird metal layer (M3), a fourth passivation layer (P4), a fourth metallayer (M4), a fifth passivation layer (P5) and a fifth metal layer (M5)in a similar manner.

The M1 merely serves for external connection purpose. A portion of theM1 in the first through hole extends through the P1 and is exposed fromthe P1 to form a ball pad. An area of the first through hole may beslightly larger than an area of the second through hole, and the secondthrough hole is disposed directly above the first through hole. Aportion of the M2 in the second through hole of the P2 forms aconductive via, which is disposed on the ball pad of the Ml, forming a“via-on-via structure.” The unflat structure of the P1 and the M1 aroundthe first through hole may result in insufficient exposure anddevelopment of a photoresist for forming the conductive via of the M2.Thus, the yield rate of the RDL structure is low. Similarly, the M5 isan under bump metallization (UBM) merely serving for externalconnections.

After formation of the 5P5M structure, at least one semiconductor die isattached to the 5P5M structure, and an encapsulant is applied to coverthe semiconductor die and the 5P5M structure. Then, the carrier isremoved, and the seed layer (or the release metal film) is removed byetching. The portion of the M1 in the first through hole of the P1 isexposed from the P1 to form the ball pad, and an electrical connectingelement is connected thereto for external connections. Then, asingulation process is conducted to form a plurality of separate packagestructures.

During the manufacturing process of such 5P5M structure, each of thefive metal layers may be formed with a distinct patterned photoresistcorresponding to the layout thereof, and thus the manufacturing processof such 5P5M structure uses five different photomasks. In addition,formation of a passivation layer and a metal layer can take about 10days, and thus formation of 5P5M structure can have a total manufacturetime of about 60 days. Thus, the manufacturing cost can be high.Further, such a 5P5M structure has a great thickness, which may readilycause warpage and delamination issues. Usually, one passivation layercan increase a warpage of about 100 μm to about 500 μm.

As described above, the ball pad is formed by the Ml, and a materialthereof is copper. The electrical connecting element connected to theball pad may be made of a solder ball (e.g., by solder ball mountingprocess) or a solder paste (e.g., by solder paste printing process). Asize of the solder ball may be smaller than a size of the solder paste.However, since the solder ball is mainly composed of tin, anintermetallic compound (IMC) may be readily formed at the solder jointboundary between the ball pad (made of copper) and the electricalconnecting element (made of tin). Such IMC may decrease bonding strengthbetween the ball pad and the solder ball. An increased thickness of theM1 (e.g., greater than 8 μm) may compensate the effect of the IMC, but atotal thickness of the package is correspondingly increased. Besides,with the increased thickness, a gap between an extending portion of theM1 disposed on the P1 and the M2 is reduced, thus may readily cause ashort circuit between the extending portion of the M1 and the M2. Suchshort circuit may be avoided by decreasing an area of the extendingportion of the M1 disposed on the P1. However, the extending portion ofthe M1 with the decreased area cannot provide sufficient support for theball pad. When the electrical connecting element is connected to theball pad, the weight of the electrical connecting element may causedelamination of the M1.

On the other hand, a material of the solder paste includes a fraction oftin less than that of a solder ball, thus can prevent IMC formed betweenthe ball pad and the electrical connecting element. However, a solderpaste printing process can be constrained to form an electricalconnecting element with a size of greater than 250 μm*250 μm (since thesize of the opening of a screen printing plate is greater than 250μm*250 μm). Hence, a size of the ball pad should correspondinglyincrease, which adversely affects the layout of the package.

The present disclosure addresses at least some of the above concerns andprovides for an improved wiring structure, an improved electronicdevice, and improved techniques for manufacturing the electronic device.In the electronic device and similarly in the wiring structure, an RDL(e.g., M2) is directly disposed on a circuit structure (e.g., M1) toform a conductive structure, and a portion of the circuit structure isexposed from an insulating layer (P1) for external connections. The RDLand the circuit structure are combined in the conductive structure andcan be formed by using a same photomask and/or a same patternedphotoresist. An insulating layer (e.g., P2) therebetween can be omitted.Thus, the cost of the manufacturing process is reduced.

FIG. 1 illustrates a cross-sectional view of an electronic device 1according to some embodiments of the present disclosure. The electronicdevice 1 includes a first insulating layer 10, a lower conductivestructure 2, at least one intermediate conductive structure 3, an upperconductive structure 4, a plurality of insulating layers (e.g., a secondinsulating layer 20, a third insulating layer 30 and a fourth insulatinglayer 40), an under bump metallization (UBM) 5, at least onesemiconductor die 6, an encapsulant 16, and at least one electricalconnecting element 14.

The first insulating layer 10 has an upper surface 101 and a lowersurface 102 opposite to the upper surface 101. The first insulatinglayer 10 defines a first opening 104 extending through the firstinsulating layer 10. The first opening 104 has a sidewall 103. Amaterial of the first insulating layer 10 may include an insulatingmaterial, a passivation material, a dielectric material or a solderresist material, such as, for example, a benzocyclobutene (BCB) basedpolymer or a polyimide (PI). In some embodiments, the first insulatinglayer 10 may include a cured photoimageable dielectric (PID) material,such as an epoxy or a PI including photoinitiators. A thickness of thefirst insulating layer 10 may be about 7 μm.

The lower conductive structure 2 is disposed on the upper surface 101 ofthe first insulating layer 10 and in the first opening 104 of the firstinsulating layer 10. The lower conductive structure 2 includes a lowerseed layer 21, a lower circuit structure 22 and a lower redistributionlayer (RDL) 23 sequentially disposed on the first insulating layer 10.

The lower seed layer 21 is disposed on the upper surface 101 of thefirst insulating layer 10, and on the sidewall 103 of the first opening104 of the first insulating layer 10. The lower seed layer 21 isinterposed between the first insulating layer 10 and the lower circuitstructure 22. In some embodiments, the lower seed layer 21 is notexposed from the lower surface 102 of the first insulating layer 10.That is, a portion of the lower seed layer 21 adjacent to the lowersurface 102 of the insulating layer 10 is removed or omitted. A materialof the lower seed layer 21 may be titanium, copper, another metal or analloy. In some embodiments, as shown in FIG. 1, the lower seed layer 21includes a titanium layer 211 and a copper layer 212. However, the lowerseed layer 21 may include more or less layers, or may be omitted. Thetitanium layer 211 is disposed on and contacts the upper surface 101 ofthe first insulating layer 10 and the sidewall 103 of the first opening104 of the first insulating layer 10. The copper layer 212 is disposedon and contacts the titanium layer 211. A thickness of the titaniumlayer 211 may be about 0.1 μm, and a thickness of the copper layer 212may be about 0.2 μm.

The lower circuit structure 22 is disposed on the upper surface 101 ofthe first insulating layer 10, and in the first opening 104 of the firstinsulating layer 10. As shown in FIG. 1, the lower circuit structure 22is disposed on and completely covers the lower seed layer 21. The lowercircuit structure 22 may contact the lower seed layer 21.

The lower circuit structure 22 includes a plurality of metal layers(e.g., a first barrier layer 24, a wetting layer 25 and a second barrierlayer 26). The first barrier layer 24, the wetting layer 25 and thesecond barrier layer 26 are sequentially disposed on the lower seedlayer 21. The first barrier layer 24 is disposed on the upper surface101 of the first insulating layer 10, and on the sidewall 103 of thefirst opening 104 of the first insulating layer 10. The first barrierlayer 24 is disposed on the lower seed layer 21, and may contact andcompletely covers the lower seed layer 21, such as the copper layer 212of the lower seed layer 21. In some embodiments, the first barrier layer24 is not exposed from the lower surface 102 of the first insulatinglayer 10. That is, a portion of the first barrier layer 24 adjacent tothe lower surface 102 of the insulating layer 10 is removed or omitted.

The wetting layer 25 is disposed on the upper surface 101 of the firstinsulating layer 10, and in the first opening 104 of the firstinsulating 10. The wetting layer 25 is disposed on the first barrierlayer 24, and may contact and completely cover the first barrier layer24. Since the portions of the lower seed layer 21 and the first barrierlayer 24 adjacent to the lower surface 102 of the insulating layer 10 isremoved or omitted, a portion 254 of the wetting layer 25 is exposedfrom the lower seed layer 21 and the first barrier layer 24, and fromthe lower surface 102 of the first insulating layer 10. The exposedportion 254 of the wetting layer 25 forms a ball pad for externalconnections.

The second barrier layer 26 is disposed on the upper surface 101 of thefirst insulating layer 10, and in the first opening 104 of the firstinsulating 10. The second barrier layer 26 is disposed on the wettinglayer 25, and may contact and completely cover the wetting layer 25.

The lower circuit structure 22 includes a bonding region 22 a and anextending region 22 b. In some embodiments, each layer of the lowercircuit structure 22 within the bonding region 22 a and within theextending region 22 b may be formed concurrently and integrally as amonolithic structure. The bonding region 22 a is exposed from the lowersurface 102 of the first insulating layer 10 and includes the exposedportion 254 of the wetting layer 25 as the ball pad for externalconnections. As shown in FIG. 1, since the portion of the first barrierlayer 24 adjacent to the lower surface 102 of the insulating layer 10 isremoved or omitted, the bonding region 22 a includes or is composed oftwo metal layers, i.e., the wetting layer 25 and the second barrierlayer 26. Since the bonding region 22 a does not include the firstbarrier layer 24, the bonding region 22 a is recessed from the lowersurface 102 of the first insulating layer 10.

The extending region 22 b is connected to and extends from the bondingregion 22 a. The extending region 22 b is disposed on the sidewall 103of the first opening 104 of the first insulating layer 10, and on theupper surface 101 of the first insulating layer 10. As shown in FIG. 1,the extending region 22 b includes or is composed of three layers, i.e.,the first barrier layer 24, the wetting layer 25 and the second barrierlayer 26. Accordingly, an amount of metal layers of the bonding region22 a is different from an amount of metal layers of the extending region22 b.

A material of the first barrier layer 24 and the second barrier layer 26may include nickel. A material of the wetting layer 25 may include gold.A thickness of the first barrier layer 24 may be about 1 μm, a thicknessof the wetting layer 25 may be about 0.3 μm, and a thickness of thesecond barrier layer 26 may be about 3 μm. In some embodiments, thefirst barrier layer 24, the wetting layer 25 and the second barrierlayer 26 may be formed by plating using a same photomask and/or a samepatterned photoresist. Thus, a peripheral wall 223 of the lower circuitstructure 22, including the first barrier layer 24, the wetting layer 25and the second barrier layer 26, is continuous. That is, the peripheralwalls of the first barrier layer 24, the wetting layer 25 and the secondbarrier layer 26 are coplanar with one another.

The lower RDL 23 is disposed on the upper surface 101 of the firstinsulating layer 10, and in the first opening 104 of the firstinsulating 10. The lower RDL 23 is disposed on the lower circuitstructure 22, and may contact and completely cover the lower circuitstructure 22, such as the second barrier layer 26 of the lower circuitstructure 22. The lower RDL 23 may include at least one pad and at leastone trace. A material of the lower RDL 23 may include, for example,copper, another conductive metal, or an alloy thereof. A thickness ofthe lower RDL 23 may be about 4.3 μm. The lower RDL 23 may be formed byplating using the same photomask and/or the same patterned photoresistas the lower circuit structure 22. Hence, a peripheral wall 233 of thelower RDL 23 may align with the peripheral wall 223 of the lower circuitstructure 22. That is, the peripheral wall 233 of the lower RDL 23 maybe coplanar with the peripheral wall 223 of the lower circuit structure22. The lower RDL 23 may be conformal with the lower circuit structure22. A layout of the lower RDL 23 may be substantially the same as alayout of the lower circuit structure 22.

The second insulating layer 20 covers at least portions of the firstinsulating layer 10 and the lower conductive structure 2. As shown inFIG. 1, the second insulating layer 20 is disposed on the upper surface101 of the first insulating layer 10. The second insulating layer 20 hasan upper surface 201 and a lower surface 202 opposite to the uppersurface 201. The second insulating layer 20 defines a second opening 204extending through the second insulating layer 20 to expose a portion ofthe lower RDL 23 of the lower conductive structure 2. A material of thesecond insulating layer 20 may include an insulating material, apassivation material, a dielectric material or a solder resist material,such as, for example, a benzocyclobutene (BCB) based polymer or apolyimide (PI). In some embodiments, the second insulating layer 20 mayinclude a cured photoimageable dielectric (PID) material, such as anepoxy or a PI including photoinitiators. A thickness of the secondinsulating layer 20 may be about 9 μm.

The intermediate conductive structure 3 is disposed between the upperconductive structure 4 and the lower conductive structure 2. As shown inFIG. 1, the intermediate conductive structure 3 is disposed on the uppersurface 201 of the second insulating layer 20. FIG. 1 shows oneintermediate conductive structure 3. However, the electronic device 1may include more than one intermediate conductive structure 3. Theintermediate conductive structure 3 extends into the second opening 204of the second insulating layer 20 to form a conductive via 38. That is,the conductive via 38 of the intermediate conductive structure 3 extendsthrough the second insulating layer 20. The intermediate conductivestructure 3 is electrically connected to the lower conductive structure2 through the conductive via 38.

The intermediate conductive structure 3 includes an intermediate seedlayer 31 and an intermediate RDL 32 sequentially disposed on the secondinsulating layer 20. A material of the intermediate seed layer 31 may betitanium, copper, another metal or an alloy. FIG. 1 shows theintermediate seed layer 31 composed of only or at least primarily of onelayer. However, the intermediate seed layer 31 may include more than onelayers, or may be omitted. The intermediate RDL 32 is disposed on andcompletely covers the intermediate seed layer 31. The intermediate RDL32 may include at least one pad and at least one trace. A material ofthe intermediate RDL 32 may include, for example, copper, anotherconductive metal, or an alloy thereof. A thickness of the intermediateRDL 32 may be about 8 μm.

The third insulating layer 30 covers at least portions of the secondinsulating layer 20 and the intermediated conductive structure 3. Asshown in FIG. 1, the third insulating layer 30 is disposed on the uppersurface 201 of the second insulating layer 20. The third insulatinglayer 30 has an upper surface 301 and a lower surface 302 opposite tothe upper surface 301. The third insulating layer 30 defines a thirdopening 304 extending through the third insulating layer 30 to expose aportion of the intermediate RDL 32. A material of the third insulatinglayer 30 may include an insulating material, a passivation material, adielectric material or a solder resist material, such as, for example, abenzocyclobutene (BCB) based polymer or a polyimide (PI). In someembodiments, the third insulating layer 30 may include a curedphotoimageable dielectric (PID) material, such as an epoxy or a PIincluding photoinitiators. A thickness of the third insulating layer 30may be about 9 μm.

The upper conductive structure 4 is disposed on the upper surface 301 ofthe third insulating layer 30. As shown in FIG. 1, the upper conductivestructure 4 is disposed on the upper surface 301 of the third insulatinglayer 30. The upper conductive structure 4 extends into the thirdopening 304 of the third insulating layer 30 to form a conductive via48. That is, the conductive via 48 of the upper conductive structure 4extends through the third insulating layer 30. The upper conductivestructure 4 is electrically connected to the intermediate conductivestructure 3 through the conductive via 48. Hence, the upper conductivestructure 4 is electrically connected to the lower conductive structure2 through the intermediate conductive structure 3.

The upper conductive structure 4 includes an upper seed layer 41 and anupper RDL 42 sequentially disposed on the third insulating layer 30. Amaterial of the upper seed layer 41 may be titanium, copper, anothermetal or an alloy. FIG. 1 shows the upper seed layer 41 composed of onlyor at least primarily of one layer. However, the upper seed layer 41 mayinclude more than one layers, or may be omitted. The upper RDL 42 isdisposed on and completely covers the upper seed layer 41. The upper RDL42 may include at least one pad and at least one trace. A material ofthe upper RDL 42 may include, for example, copper, another conductivemetal, or an alloy thereof. A thickness of the upper RDL 42 may be about8 μm.

The fourth insulating layer 40 covers at least portions of the thirdinsulating layer 30 and the upper conductive structure 4. As shown inFIG. 1, the fourth insulating layer 40 is disposed on the upper surface301 of the third insulating layer 30. The fourth insulating layer 40 hasan upper surface 401 and a lower surface 402 opposite to the uppersurface 401. The fourth insulating layer 40 defines a fourth opening 404extending through the fourth insulating layer 40 to expose a portion ofthe upper RDL 42 of the upper conductive structure 4. A material of thefourth insulating layer 40 may include an insulating material, apassivation material, a dielectric material or a solder resist material,such as, for example, a benzocyclobutene (BCB) based polymer or apolyimide (PI). In some embodiments, the fourth insulating layer 40 mayinclude a cured photoimageable dielectric (PID) material, such as anepoxy or a PI including photoinitiators. A thickness of the fourthinsulating layer 40 may be about 9 μm.

The UBM 5 is electrically connected to the upper conductive structure 4,such as the upper RDL 42 of the conductive structure 4. As shown in FIG.1, the UBM 5 is disposed in the fourth opening 404 of the fourthinsulating layer 40, and a portion of the UBM 5 may extend on the uppersurface 401 of the fourth insulating layer 40. As shown in FIG. 1, theUBM 5 includes a UBM seed layer 51, a copper layer 52, a nickel layer 53and a gold layer 54 sequentially disposed in the fourth opening 404. Amaterial of the UBM seed layer 51 may be titanium, copper, another metalor an alloy.

The semiconductor die 6 is electrically connected to the upperconductive structure 4 through the UBM 5. For example, the semiconductordie 6 includes at least one bump pad 63 and at least one interconnectingelement 64. The bump pad 63 is disposed on the semiconductor die 6, andthe interconnecting element 64 is disposed on the UBM 5 and connected tothe bump pad 63. In some embodiments, the interconnecting element 64 maybe formed of a pre-solder or a solder ball.

The encapsulant 16 is disposed on the fourth insulating layer 40, andencapsulates and covers the semiconductor die 6, the bump pad 63, theinterconnecting element 64 and the UBM 5. A material of the encapsulant16 may be a molding compound with or without fillers.

The electrical connecting element 14 is attached to the bonding region22 a of the lower conductive structure 22 for external connections. Asshown in FIG. 1, the electrical connecting element 14 is attached to theball pad formed by the exposed portion 254 of the wetting layer 25. Theelectrical connecting element 14 may be formed of a solder ball. In someembodiments, a maximum width or diameter of the electrical connectingelement 14 may be about 80 μm, or less. Correspondingly, a width ordiameter of the ball pad formed by the exposed portion 254 of thewetting layer 25 (i.e., a width or diameter of the bonding region 22 aof the lower circuit structure 22) may be about 80 μm*80 μm. In someembodiments, the electrical connecting element 14 is connected to amother board.

In the electronic device 1, since the lower RDL 23 is directly disposedon the lower circuit structure 22 rather than being disposed on thelower circuit structure 22 via another conductive metal layer, anadditional conductive metal layer can be omitted. Further, an additionalinsulating layer can also be omitted since there is no insulating layerneeded between the lower RDL 23 and the lower circuit structure 22. Theelectronic device 1 includes four conductive metal layers (i.e., thelower conductive structure 2, the intermediate conductive structure 3,the upper conductive structure 4 and the UBM 5) and four insulatinglayers (i.e., the first insulating layer 10, the second insulating layer20, the third insulating layer 30 and the fourth insulating layer 40)rather than five conductive metal layers and five insulating layers.Thus, the formation time and the manufacturing cost of the electronicdevice 1 can be reduced. A total thickness of the electronic device 1 isalso reduced, avoiding warpage and delamination issues. Besides, thelower RDL 23 and the lower circuit structure 22 can be formed by using asame photomask and/or a same patterned photoresist, which furtherreduces the formation time and the manufacturing cost of the electronicdevice 1.

Furthermore, since the first barrier layer 24 is omitted in the bondingregion 22 a (i.e., the portion 254 of the wetting layer 25 is exposedfrom the first barrier layer 24 as the ball pad), the electricalconnecting element 14 can be formed of a solder ball rather than asolder paste. That is, the wetting layer 25 can prevent formation of IMCbetween the solder ball (e.g., made of tin) and the wetting layer 25(e.g., made of gold). The size of the ball pad of the electronic device1 can thus be reduced to about 80 μm*80 μm, which is much smaller than aball pad with an electrical connecting element made of a solder paste asdescribed above. A total thickness of the lower circuit structure 22 inthe electronic device 1 is about 4.3 μm, which is smaller than athickness of a ball pad made of copper (e.g., about 8 μm) describedabove. Such reduced thickness of the lower circuit structure 22 isbeneficial for reducing the total thickness of the electronic device 1and for preventing short circuit between the lower conductive structure2 and the intermediate conductive structure 3.

Since the lower circuit structure 22 has the same layout as the lowerRDL 23, an area of the extending region 22 b of the lower circuitstructure 22 disposed on the upper surface 101 of the first insulatinglayer 10 has an enlarged area. The extending region 22 b of the lowercircuit structure 22 can thus provide sufficient support for the bondingregion 22 a of the lower circuit structure 22, preventing delaminationcaused by the weight of the electrical connecting element 14 connectedto the bonding region 22 a. Besides, since the bonding region 22 a isrecessed from the lower surface 102 of the first insulating layer 10, acontact area between the electrical connecting element 14 and the lowerconductive structure 2 is increased, thus improving bonding strengththerebetween.

Since the lower seed layer 21 (e.g., the copper layer 212 of the lowerseed layer 21) is made of copper and the wetting layer 25 is made ofgold, an IMC may occur when the lower seed layer 21 directly contactsthe wetting layer 25. However, the first barrier layer 24 disposedtherebetween can prevent such IMC. Similarly, concerning the wettinglayer 25 made of gold and the lower RDL 23 made of copper, the secondbarrier layer 26 disposed therebetween can prevent an IMC which mayoccur when the wetting layer 25 directly contacts the lower RDL 23.

FIG. 2 illustrates an enlarged view of an area “A” shown in FIG. 1. Itis noted that FIG. 2 shows a wiring structure 12 that is included in theelectronic device 1 according to some embodiments of the presentdisclosure.

The wiring structure 12 includes an insulating layer (e.g., the firstinsulating layer 10) and a conductive structure (e.g., the lowerconductive structure 2).

The first insulating layer 10 has the upper surface 101 and the lowersurface 102 opposite to the upper surface 101. The first insulatinglayer 10 defines an opening (e.g., the first opening 104) extendingthrough the first insulating layer 10. The first opening 104 has asidewall 103. The lower conductive structure 2 is disposed on the uppersurface 101 of the first insulating layer 10 and in the first opening104 of the first insulating layer 10. The lower conductive structure 2includes the lower seed layer 21, the lower circuit structure 22 and thelower redistribution layer (RDL) 23 sequentially disposed on the firstinsulating layer 10.

The lower seed layer 21 is disposed on the upper surface 101 of thefirst insulating layer 10, and on the sidewall 103 of the first opening104 of the first insulating layer 10. The lower seed layer 21 isinterposed between the first insulating layer 10 and the lowerconductive structure 22. In some embodiments, the lower seed layer 21 isnot exposed from the lower surface 102 of the first insulating layer 10.That is, a portion of the lower seed layer 21 adjacent to the lowersurface 102 of the insulating layer 10 is removed or omitted.Accordingly, the lower seed layer 21 defines a through hole 210extending through the seed layer 21. The through hole 210 of the lowerseed layer 21 is located at the opening 104 of the first insulatinglayer 10. A central axial of the through hole 210 of the lower seedlayer 21 aligns with a central axial of the opening 104 of theinsulating layer 10. A material of the lower seed layer 21 may betitanium, copper, another metal or an alloy. In some embodiments, asshown in FIG. 2, the lower seed layer 21 includes a titanium layer 211and a copper layer 212. However, the lower seed layer 21 may includemore or less layers, or may be omitted. The titanium layer 211 isdisposed on and contacts the upper surface 101 of the first insulatinglayer 10 and the sidewall 103 of the first opening 104 of the firstinsulating layer 10. The copper layer 212 is disposed on and contactsthe titanium layer 211.

The lower circuit structure 22 is disposed on the upper surface 101 ofthe first insulating layer 10, and in the first opening 104 of the firstinsulating layer 10. As shown in FIG. 2, the lower circuit structure 22is disposed on and completely covers the lower seed layer 21. The lowercircuit structure 22 may contact the lower seed layer 21.

The lower circuit structure 22 includes a plurality of metal layers(e.g., a first barrier layer 24, a wetting layer 25 and a second barrierlayer 26). The first barrier layer 24, the wetting layer 25 and thesecond barrier layer 26 are sequentially disposed on the lower seedlayer 21. The first barrier layer 24 is disposed on the upper surface101 of the first insulating layer 10, and on the sidewall 103 of thefirst opening 104 of the first insulating layer 10. The first barrierlayer 24 is disposed on the lower seed layer 21, and may contact andcompletely covers the lower seed layer 21, such as the copper layer 212of the lower seed layer 21. In some embodiments, the first barrier layer24 is not exposed from the lower surface 102 of the first insulatinglayer 10. That is, a portion of the first barrier layer 24 adjacent tothe lower surface 102 of the insulating layer 10 is removed or omitted.Accordingly, the first barrier layer 24 defines a through hole 240extending through the first barrier layer 24. The through hole 240 ofthe first barrier layer 24 may substantially align and communicate withthe through hole 210 of the seed layer 21.

The wetting layer 25 is disposed on the upper surface 101 of the firstinsulating layer 10, and in the first opening 104 of the firstinsulating 10. The wetting layer 25 is disposed on the first barrierlayer 24, may contact and completely cover the first barrier layer 24.Since the portions of the lower seed layer 21 and the first barrierlayer 24 adjacent to the lower surface 102 of the insulating layer 10 isremoved or omitted, a portion 254 of the wetting layer 25 is exposedfrom the lower seed layer 21 and the first barrier layer 24, and fromthe lower surface 102 of the first insulating layer 10. That is, theportion 254 of the wetting layer 25 is exposed from the through hole 210of the lower seed layer 21 and the through hole 240 the first barrierlayer 24, and is exposed form the lower surface 102 of the firstinsulating layer 10. The exposed portion 254 of the wetting layer 25forms a ball pad for external connections.

The second barrier layer 26 is disposed on the upper surface 101 of thefirst insulating layer 10, and in the first opening 104 of the firstinsulating 10. The second barrier layer 26 is disposed on the wettinglayer 25, and may contact the wetting layer 25. A material of the firstbarrier layer 24 and the second barrier layer 26 may include nickel. Amaterial of the wetting layer 25 may include gold.

The lower circuit structure 22 includes the bonding region 22 a and theextending region 22 b. The bonding region 22 a is exposed from the firstopening 104 of the first insulating layer 10 and includes the exposedportion 254 of the wetting layer 25 and the second barrier layer 26. Theextending region 22 b is connected to and extends from the bondingregion 22 a. The extending region 22 b is disposed on the sidewall 103of the first opening 104 of the first insulating layer 10, and on theupper surface 101 of the first insulating layer 10.

The lower RDL 23 is disposed on the upper surface 101 of the firstinsulating layer 10, and in the first opening 104 of the firstinsulating 10. The lower RDL 23 is disposed on the lower circuitstructure 22, and may contact and completely cover the lower circuitstructure 22, such as the second barrier layer 26 of the lower circuitstructure 22. A material of the lower RDL 23 may include, for example,copper, another conductive metal, or an alloy thereof.

FIG. 3 illustrates a cross-sectional view of an electronic device laaccording to some embodiments of the present disclosure. The electronicdevice la is similar to the electronic device 1 shown in FIG. 1, exceptthat the UBM 5 is omitted in the electronic device la, and the upperconductive structure 4 of the electronic device 1 is replaced by anupper conductive structure 4 a in the electronic device 1 a.

As shown in FIG. 3, the upper conductive structure 4 a in the electronicdevice la includes an upper seed layer 41, an upper RDL 42 and an uppercircuit structure 43 sequentially disposed on the third insulating layer30. A material of the upper seed layer 41 may be titanium, copper,another metal or an alloy. FIG. 3 shows the upper seed layer 41 composedof only or at least primarily of one layer. However, the upper seedlayer 41 may include more than one layers, or may be omitted. The upperRDL 42 is disposed on and completely covers the upper seed layer 41. Theupper RDL 42 may include at least one pad and at least one trace. Amaterial of the upper RDL 42 may include, for example, copper, anotherconductive metal, or an alloy thereof.

The upper circuit structure 43 includes a plurality of metal layers. Theupper circuit structure 43 may contact and completely cover the upperRDL 42. For example, the upper circuit structure 43 includes a nickellayer 44, a palladium layer 45 and a gold layer 46 sequentially disposedon the upper RDL 42. The nickel layer 44 and the palladium layer 45serve for copper barrier function, and the gold layer 6 serves forwetting function for connection with the interconnecting element 64 a.The upper circuit structure 43 may be formed by plating using a samephotomask and/or a same patterned photoresist as the upper RDL 42.Hence, a peripheral wall 433 of the upper circuit structure 43 may alignwith a peripheral wall 423 of the upper RDL 42. The upper circuitstructure 43 may be conformal with the upper RDL 42. A layout of theupper circuit structure 43 may be substantially the same as a layout ofupper RDL 42.

Since the UBM 5 of the electronic device 1 shown in FIG. 1 is omitted inthe electronic device la shown in FIG. 3, the semiconductor die 6 in theelectronic device la is electrically connected to the upper conductivestructure 4 a (e.g., the gold layer 46 of the upper circuit structure43) instead of the UBM 5. For example, the fourth insulating layer 40defines a fourth opening 404 a which is located substantiallycorresponding to the third opening 304 of the third insulating layer 30.The fourth opening 404 a of the fourth insulating layer 40 exposes aportion (e.g., the conductive via 48) of the upper conductive structure4 a, and the semiconductor die 6 is connected to the exposed portion ofthe upper conductive structure 4 a through at least one interconnectingelement 64 a. The interconnecting element 64 a may be formed of a solderball, such as a solder ball made of tin.

In the electronic device la, since the upper circuit structure 43 isdirectly disposed on the upper RDL 42, a UBM layer (e.g., the UBM 5 ofthe electronic device 1 shown in FIG. 1) can be omitted. Thus, theformation time, manufacturing cost and the total thickness of theelectronic device la can be further reduced. Besides, the upper circuitstructure 43 and the upper RDL 42 can be formed by using a samephotomask and/or a same patterned photoresist.

FIG. 4 through FIG. 28 illustrate a method for manufacturing anelectronic device according to some embodiments of the presentdisclosure. In some embodiments, the method is for manufacturing anelectronic device such as the electronic device 1 shown in FIG. 1.

Referring to FIG. 4, a first carrier 90 is provided. The first carrier90 may be made of glass, and may include a release film disposedthereon. Then, a base seed layer 91 is formed on the release film of thefirst carrier 90 by, for example, sputtering. The base seed layer 91 maybe made of copper.

Referring to FIG. 5, a first insulating layer 10 is formed on the baseseed layer 90. The first insulating layer 10 has an upper surface 101and a lower surface 102 opposite to the upper surface 101. A firstopening 104 is formed to extend through the first insulating layer 10and exposed portions of the base seed layer 90. The first opening 104has a sidewall 103. A material of the first insulating layer 10 mayinclude an insulating material, a passivation material, a dielectricmaterial or a solder resist material, such as, for example, abenzocyclobutene (BCB) based polymer or a polyimide (PI). In someembodiments, the first insulating layer 10 may include a curedphotoimageable dielectric (PID) material, such as an epoxy or a PIincluding photoinitiators. A thickness of the first insulating layer 10may be about 7 μm.

Referring to FIG. 6, a lower seed layer 21 is formed on the uppersurface 101 of the first insulating layer 10 and in the first opening104 of the first insulating layer 10 by, for example, sputtering. Amaterial of the lower seed layer 21 may be titanium, copper, anothermetal or an alloy. In some embodiments, as shown in FIG. 6, the lowerseed layer 21 includes a titanium layer 211 and a copper layer 212.However, the lower seed layer 21 may include more or less layers. Thetitanium layer 211 is disposed on and contacts the upper surface 101 ofthe first insulating layer 10 and the sidewall 103 of the first opening104 of the first insulating layer 10. The copper layer 212 is disposedon and contacts the titanium layer 211. A thickness of the titaniumlayer 211 may be about 0.1 μm, and a thickness of the copper layer 212may be about 0.2 μm.

Referring to FIG. 7, a first photoresist layer 92 a is disposed on thefirst insulating layer 10 and the lower seed layer 21. Then, the firstphotoresist layer 92 a is exposed to a pattern of intense light. Forexample, a first photomask 94 a is disposed adjacent to the firstphotoresist layer 92 a, so as to cover a portion of the firstphotoresist layer 92 a. Then, the first photoresist layer 92 a isexposed to a radiation source 96.

Referring to FIG. 8, the first photoresist layer 92 a is then developedby a developer. That is, the first photoresist layer 92 a is patternedto define a plurality of openings 921 a to expose portions of the lowerseed layer 21 disposed on the upper surface 102 of the first insulatinglayer 10 and in the first opening 104 of the first insulating layer 10.

Referring to FIG. 9, a first barrier layer 24, a wetting layer 25 and asecond barrier layer 26 are sequentially formed on the lower seed layer21 to form a lower circuit structure 22. The lower circuit structure 22is formed in the openings 921 a of the first photoresist layer 92 a andon the lower seed layer 21 by, for example, plating. The lower circuitstructure 22 includes a plurality of metal layers (e.g., the firstbarrier layer 24, the wetting layer 25 and the second barrier layer 26).The first barrier layer 24 is formed on the lower seed layer 21, and maycontact the lower seed layer 21, such as the copper layer 212 of thelower seed layer 21. The wetting layer 25 is formed on the first barrierlayer 24, and may contact and completely cover the first barrier layer24. The second barrier layer 26 is formed on the wetting layer 25, andmay contact and completely cover the wetting layer 25. A material of thefirst barrier layer 24 and the second barrier layer 26 may includenickel. A material of the wetting layer 25 may include gold. A thicknessof the first barrier layer 24 may be about 1 μm, a thickness of thewetting layer 25 may be about 0.3 μm, and a thickness of the secondbarrier layer 26 may be about 3 μm. Since the first barrier layer 24,the wetting layer 25 and the second barrier layer 26 are formed by usingthe same photomask 94 a and/or the same patterned photoresist 92 a, aperipheral wall 223 of the lower circuit structure 22, including thefirst barrier layer 24, the wetting layer 25 and the second barrierlayer 26, is continuous.

Referring to FIG. 10, a lower RDL 23 is formed in the openings 921 a ofthe first photoresist layer 92 a and on the lower circuit structure 22by, for example, plating. The lower RDL 23 is formed on a surface of thesecond barrier layer 26 of the lower circuit structure 22. The lower RDL23 may contact and completely cover the lower circuit structure 22, suchas the second barrier layer 26 of the lower circuit structure 22. Thelower RDL 23 may include at least one pad and at least one trace. Amaterial of the lower RDL 23 may include, for example, copper, anotherconductive metal, or an alloy thereof. A thickness of the lower RDL 23may be about 4.3 μm.

As shown in FIGS. 9 and 10, the lower circuit structure 22 and the lowerRDL 23 are formed by using the same photoresist (e.g., the firstphotoresist 92 a). That is, the lower circuit structure 22 and the lowerRDL 23 are formed by using the same photomask (e.g., the first photomask94 b). Hence, a peripheral wall 233 of the lower RDL 23 may align withthe peripheral wall 223 of the lower circuit structure 22. The lower RDL23 may be conformal with the lower circuit structure 22. A layout of thelower RDL 23 may be substantially the same as a layout of the lowercircuit structure 22.

Referring to FIG. 11, the first photoresist layer 92 a is removed, andportions of the lower seed layer 21 not covered by the lower conductivestructure 22 is removed by, for example, etching. Accordingly, a lowerconductive structure 2 is formed and includes the lower seed layer 21,the lower circuit structure 22 and the lower RDL 23. The lowerconductive structure 2 is disposed on the upper surface 101 of the firstinsulating layer 10 and in the first opening 104 of the first insulatinglayer 10. The lower seed layer 21 is interposed between the firstinsulating layer 10 and the lower conductive structure 22. The lowercircuit structure 22, such as the first barrier layer 24 of the lowercircuit structure 22, may completely cover the lower seed layer 21.

Referring to FIG. 12, a second insulating layer 20 is formed on thefirst insulating layer 10. The second insulating layer 20 covers atleast portions of the first insulating layer 10 and the lower conductivestructure 2. As shown in FIG. 12, the second insulating layer 20 isdisposed on the upper surface 101 of the first insulating layer 10. Thesecond insulating layer 20 has an upper surface 201 and a lower surface202 opposite to the upper surface 201. A second opening 204 is formed toextend through the second insulating layer 20 to expose a portion of thelower RDL 23. A material of the second insulating layer 20 may includean insulating material, a passivation material, a dielectric material ora solder resist material, such as, for example, a benzocyclobutene (BCB)based polymer or a polyimide (PI). In some embodiments, the secondinsulating layer 20 may include a cured photoimageable dielectric (PID)material, such as an epoxy or a PI including photoinitiators. Athickness of the second insulating layer 20 may be about 9 μm.

Referring to FIG. 13, an intermediate seed layer 31 is formed on theupper surface 201 of the second insulating layer 20 and in the secondopening 204 of the second insulating layer 20 by, for example,sputtering. A material of the intermediate seed layer 31 may betitanium, copper, another metal or an alloy. FIG. 13 shows theintermediate seed layer 31 composed of only or at least primarily of onelayer. However, the intermediate seed layer 31 may include more than onelayers.

Referring to FIG. 14, a second photoresist 92 b is disposed on thesecond insulating layer 20 and the intermediate seed layer 31. Thesecond photoresist layer 92 b is patterned to define a plurality ofopenings 921 b to expose portions of the intermediate seed layer 31disposed on the upper surface 201 of the second insulating layer 20 andin the second opening 204 of the second insulating layer 20.

Referring to FIG. 15, an intermediate RDL 32 is formed in the openings921 b of the second photoresist layer 92 b and on the intermediate seedlayer 31 by, for example, plating. The intermediate RDL 32 is disposedon the intermediate seed layer 31. The intermediate RDL 32 may includeat least one pad and at least one trace. A material of the intermediateRDL 32 may include, for example, copper, another conductive metal, or analloy thereof. A thickness of the intermediate RDL 32 may be about 8 μm.Then, the second photoresist layer 92 b is removed, and portions of theintermediate seed layer 31 not covered by the intermediate RDL 32 isremoved by, for example, etching. Accordingly, an intermediateconductive structure 3 is formed and includes the intermediate seedlayer 31 and the intermediate RDL 32. The intermediate conductivestructure 3 is disposed on the upper surface 201 of the secondinsulating layer 20. The intermediate conductive structure 3 extendsinto the second opening 204 of the second insulating layer 20 to form aconductive via 38. That is, the conductive via 38 of the intermediateconductive structure 3 extends through the second insulating layer 20.The intermediate conductive structure 3 is electrically connected to thelower conductive structure 2 through the conductive via 38.

Referring to FIG. 16, a third insulating layer 30 is formed on thesecond insulating layer 20. The third insulating layer 30 covers atleast portions of the second insulating layer 20 and the intermediatedconductive structure 3. As shown in FIG. 16, the third insulating layer30 is disposed on the upper surface 201 of the second insulating layer20. The third insulating layer 30 has an upper surface 301 and a lowersurface 302 opposite to the upper surface 301. A third opening 304 isformed extending through the third insulating layer 30 to expose aportion of the intermediate RDL 32. A material of the third insulatinglayer 30 may include an insulating material, a passivation material, adielectric material or a solder resist material, such as, for example, abenzocyclobutene (BCB) based polymer or a polyimide (PI). In someembodiments, the third insulating layer 30 may include a curedphotoimageable dielectric (PID) material, such as an epoxy or a PIincluding photoinitiators. A thickness of the third insulating layer 30may be about 9 μm.

Referring to FIG. 17, an upper seed layer 41 is formed on the uppersurface 302 of the third insulating layer 30 and in the third opening304 of the third insulating layer 30 by, for example, sputtering. Amaterial of the upper seed layer 41 may be titanium, copper, anothermetal or an alloy. FIG. 17 shows the upper seed layer 41 composed ofonly or at least primarily of one layer. However, the upper seed layer41 may include more than one layers.

Referring to FIG. 18, a third photoresist 92 c is disposed on the thirdinsulating layer 30. The third photoresist layer 92 c is patterned todefine a plurality of openings 921 c to expose portions of the upperseed layer 41 disposed on the upper surface 302 of the third insulatinglayer 30 and in the third opening 304 of the third insulating layer 30.

Referring to FIG. 19, an upper RDL 42 is formed in the openings 921 c ofthe third photoresist layer 92 c and on the upper seed layer 41 by, forexample, plating. The upper RDL 42 is disposed on the upper seed layer41. The upper RDL 42 may include at least one pad and at least onetrace. A material of the upper RDL 42 may include, for example, copper,another conductive metal, or an alloy thereof. A thickness of the upperRDL 42 may be about 8 μm. Then, the third photoresist layer 92 c isremoved, and portions of the upper seed layer 41 not covered by theintermediate RDL 42 is removed by, for example, etching. Accordingly, anupper conductive structure 4 is formed and includes the upper seed layer41 and the upper RDL 42. The upper conductive structure 4 is disposed onthe upper surface 301 of the third insulating layer 30. As shown in FIG.19, the upper conductive structure 4 is disposed on the upper surface301 of the third insulating layer 30. The upper conductive structure 4extends into the third opening 304 of the third insulating layer 30 toform a conductive via 48. That is, the conductive via 48 of the upperconductive structure 4 extends through the third insulating layer 30.The upper conductive structure 4 is electrically connected to theintermediate conductive structure 3 through the conductive via 48.Hence, the upper conductive structure 4 is electrically connected to thelower conductive structure 2 through the intermediate conductivestructure 3. The intermediate conductive structure 3 is disposed betweenthe upper conductive structure 2 and the lower conductive structure 4.

Referring to FIG. 20, a fourth insulating layer 40 is formed on thethird insulating layer 30. The fourth insulating layer 40 covers atleast portions of the upper conductive structure 4. As shown in FIG. 20,the fourth insulating layer 40 is disposed on the upper surface 301 ofthe third insulating layer 30. The fourth insulating layer 40 has anupper surface 401 and a lower surface 402 opposite to the upper surface401. A fourth opening 404 is formed to extend through the fourthinsulating layer 40 to expose a portion of the upper RDL 42. A materialof the fourth insulating layer 40 may include an insulating material, apassivation material, a dielectric material or a solder resist material,such as, for example, a benzocyclobutene (BCB) based polymer or apolyimide (PI). In some embodiments, the fourth insulating layer 40 mayinclude a cured photoimageable dielectric (PID) material, such as anepoxy or a PI including photoinitiators. A thickness of the fourthinsulating layer 40 may be about 9 μm.

Referring to FIG. 21, a UBM seed layer 51 is formed on the upper surface401 of the fourth insulating layer 40 by, for example, sputtering. Amaterial of the UBM seed layer 51 may be titanium, copper, another metalor an alloy.

Referring to FIG. 22, a fourth photoresist 92 d is disposed on thefourth insulating layer 40. The fourth photoresist layer 92 d ispatterned to define a plurality of openings 921 d to expose portions ofthe UBM seed layer 51 disposed on the upper surface 401 of the fourthinsulating layer 40 and in the fourth opening 404 of the fourthinsulating layer 40.

Referring to FIG. 23, a copper layer 52, a nickel layer 53 and a goldlayer 54 are sequentially formed in the openings 921 d of the fourthphotoresist layer 92 d and on the UBM seed layer 51 by, for example,plating. Then, the fourth photoresist layer 92 d is removed, andportions of the UBM seed layer 51 not covered by the copper layer 52 isremoved by, for example, etching. Accordingly, a UBM 5 is formed andincludes the UBM seed layer 51, the copper layer 52, the nickel layer 53and the gold layer 54. The UBM 5 is disposed in the fourth opening 404of the fourth insulating layer 40, and a portion of the UBM 5 may extendon the upper surface 401 of the fourth insulating layer 40.

Referring to FIG. 24, a semiconductor die 6 is connected to the UBM 5.The semiconductor die 6 is electrically connected to the upperconductive structure 4 through the UBM 5. For example, the semiconductordie 6 includes at least one bump pad 63 and at least one interconnectingelement 64. The bump pad 63 is disposed on the semiconductor die 6, andthe interconnecting element 64 is disposed on the UBM 5 and connected tothe bump pad 63. In some embodiments, the interconnecting element 64 maybe formed of a pre-solder or a solder ball. Then, an encapsulant 16 isformed on the fourth insulating layer 40 to encapsulate and cover thesemiconductor die 6, the bump pad 63, the interconnecting element 64 andthe UBM 5. A material of the encapsulant 16 may be a molding compoundwith or without fillers.

Referring to FIG. 25, a second carrier 90 a is attached to theencapsulant 16 through an adhesive layer 98. The second carrier 90 a maybe the same as or different from the first carrier 90.

Referring to FIG. 26, the first carrier 90 is removed, and the base seedlayer 91 is exposed.

Referring to FIG. 27, the base seed layer 91 is removed by, for example,etching. In some embodiments, portions of the first barrier layer 24 andthe lower seed layer 21 adjacent to the lower surface 102 of the firstinsulating layer 10 are removed concurrently, forming a through hole(e.g., the through hole 240 shown in FIG. 2) extending through the firstbarrier layer 24 and a through hole (e.g., the through hole 210 shown inFIG. 2) extending through the lower seed layer 21. That is, a portion ofthe first barrier layer 24 is etched to expose a portion 254 of thewetting layer 25. Accordingly, the first barrier layer 24 is only orselectively disposed on the upper surface 101 of the first insulatinglayer 10 and the sidewall 103 of the first opening 104 of the firstinsulating layer 10, and is not exposed from the lower surface 102 ofthe first insulating layer 10 and the through hole 210 (FIG. 2) of thelower seed layer 21. The wetting layer 25 is disposed on the uppersurface 101 of the first insulating layer 10, and in the first opening104 of the first insulating 10. The portion 254 of the wetting layer 25is exposed from the through hole 210 (FIG. 2) of the lower seed layer 21and the through hole 240 (FIG. 2) of the first barrier layer 24, andfrom the lower surface 102 of the first insulating layer 10. The exposedportion 254 of the wetting layer 25 forms a ball pad for externalconnections.

The lower circuit structure 22 includes a bonding region 22 a and anextending region 22 b. Each layer of the lower circuit structure 22within the bonding region 22 a and within the extending region 22 b maybe formed concurrently and integrally as a monolithic structure. Thebonding region 22 a is exposed from the lower surface 102 of the firstinsulating layer 10 and includes the exposed portion 254 of the wettinglayer 25 as the ball pad for external connections. As shown in FIG. 27,the bonding region 22 a is composed of two metal layers, i.e., thewetting layer 25 and the second barrier layer 26, and is recessed fromthe lower surface 102 of the first insulating layer 10.

The extending region 22 b is connected to and extends from the bondingregion 22 a. The extending region 22 b is disposed on the sidewall 103of the first opening 104 of the first insulating layer 10, and on theupper surface 101 of the first insulating layer 10. As shown in FIG. 27,the extending region 22 a is composed of three metal layers, i.e., thefirst barrier layer 24, the wetting layer 25 and the second barrierlayer 26. Accordingly, an amount of metal layers of the bonding region22 a is different from an amount of metal layers of the extending region22 b.

Referring to FIG. 28, at least one electrical connecting element 14 isattached to the exposed portion 254 of the wetting layer 25 for externalconnections. In other words, the electrical connecting element 14 isattached to the bonding region 22 a of the lower conductive structure 2.As shown in FIG. 28, the electrical connecting element 14 is attached tothe ball pad formed by the exposed portion 254 of the wetting layer 25.The electrical connecting element 14 may be formed of a solder ball. Insome embodiments, a maximum diameter or width of the electricalconnecting element 14 may be about 80 μm, or less. Correspondingly, asize of the ball pad formed by the exposed portion 254 of the wettinglayer 25 (i.e., a size of the bonding region 22 a of the lower circuitstructure 22) may be about 80 μm*80 μm. Then, a singulation process isconducted, and the second carrier 90 a and the adhesive layer 98 areremoved, forming the electronic device 1 as shown in FIG. 1. In someembodiments, the electronic device 1 may then be electrically connectedto a mother board by attaching the electrical connecting element to themother board.

FIG. 29 through FIG. 34 illustrate a method for manufacturing anelectronic device according to some embodiments of the presentdisclosure. In some embodiments, the method is for manufacturing anelectronic device such as the electronic device 1 a shown in FIG. 3. Theinitial stages of the illustrated process are the same as, or similarto, the stages illustrated in FIG. 4 through FIG. 17. FIG. 29 depicts astage subsequent to that depicted in FIG. 17.

Referring to FIG. 29, a fifth photoresist layer 92 e is disposed on thethird insulating layer 30 and the upper seed layer 41. Then, the fifthphotoresist layer 92 e is exposed to a pattern of intense light. Forexample, a fifth photomask 94 e is disposed adjacent to the fifthphotoresist layer 92 e, so as to cover a portion of the fifthphotoresist layer 92 e. Then, the fifth photoresist layer 92 e isexposed to a radiation source 96.

Referring to FIG. 30, the fifth photoresist layer 92 e is then developedby a developer. That is, the fifth photoresist layer 92 e is patternedto define a plurality of openings 921 e to expose portions of the upperseed layer 41 disposed on the upper surface 302 of the third insulatinglayer 30 and in the third opening 304 of the third insulating layer 30.

Referring to FIG. 31, an upper RDL 42 is formed in the openings 921 e ofthe fifth photoresist layer 92 e and on the upper seed layer 41 by, forexample, plating. The upper RDL 42 may include at least one pad and atleast one trace. A material of the upper RDL 42 may include, forexample, copper, another conductive metal, or an alloy thereof.

Referring to FIG. 32, an upper circuit structure 43 is formed in theopenings 921 e of the fifth photoresist layer 92 e and on the upper RDL42 by, for example, plating. The upper circuit structure 43 includes aplurality of metal layers. The upper circuit structure 43 may contactand completely cover the upper RDL 42. For example, the upper circuitstructure 43 includes a nickel layer 44, a palladium layer 45 and a goldlayer 46 sequentially formed on the upper RDL 42. The nickel layer 44and the palladium layer 45 serve for copper barrier function, and thegold layer 46 serves for wetting function for connection with theinterconnecting element 64 a (FIG. 3). As shown in FIGS. 31 ad 32, sincethe upper circuit structure 43 is formed by using the same photomask(e.g., the fifth photomask 94 e) and/or the same patterned photoresist(e.g., the fifth photoresist 92 e) as the upper RDL 42, a peripheralwall 433 of the upper circuit structure 43 aligns with a peripheral wall423 of the upper RDL 42. The upper circuit structure 43 may be conformalwith the upper RDL 42. A layout of the upper circuit structure 43 may besubstantially the same as a layout of upper RDL 42.

Referring to FIG. 33, the fifth photoresist layer 92 e is removed, andportions of the upper seed layer 41 not covered by the upper RDL 42 isremoved by, for example, etching. Accordingly, an upper conductivestructure 4 a is formed and includes the upper seed layer 41, the upperRDL 42 and the upper circuit structure 43. The upper RDL 42 maycompletely cover the upper seed layer 41. The upper conductive structure4 extends into the third opening 304 of the third insulating layer 30 toform a conductive via 48. That is, the conductive via 48 of the upperconductive structure 4 extends through the third insulating layer 30.The upper conductive structure 4 is electrically connected to theintermediate conductive structure 3 through the conductive via 48.Hence, the upper conductive structure 4 is electrically connected to thelower conductive structure 2 through the intermediate conductivestructure 3.

Referring to FIG. 34, a fourth insulating layer 40 is formed on thethird insulating layer 30. The fourth insulating layer 40 covers atleast portions of the upper conductive structure 4 a. As shown in FIG.34, the fourth insulating layer 40 is disposed on the upper surface 301of the third insulating layer 30. The fourth insulating layer 40 has anupper surface 401 and a lower surface 402 opposite to the upper surface401. The fourth insulating layer 40 defines a fourth opening 404 a whichis located substantially corresponding to the third opening 304 of thethird insulating layer 30. The fourth opening 404 a of the fourthinsulating layer 40 exposes a portion (e.g., the conductive via 48) ofthe upper conductive structure 4 a. A material of the fourth insulatinglayer 40 may include an insulating material, a passivation material, adielectric material or a solder resist material, such as, for example, abenzocyclobutene (BCB) based polymer or a polyimide (PI). In someembodiments, the fourth insulating layer 40 may include a curedphotoimageable dielectric (PID) material, such as an epoxy or a PIincluding photoinitiators. A thickness of the fourth insulating layer 40may be about 9 μm, or less.

The stages subsequent to that shown in FIG. 34 of the illustratedprocess are similar to the stages illustrated in FIG. 24 through FIG.28, thus forming the electronic device la shown in FIG. 3.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,”“down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,”“lower,” “upper,” “over,” “under,” and so forth, are indicated withrespect to the orientation shown in the figures unless otherwisespecified. It should be understood that the spatial descriptions usedherein are for purposes of illustration only, and that practicalimplementations of the structures described herein can be spatiallyarranged in any orientation or manner, provided that the merits ofembodiments of this disclosure are not deviated from by such anarrangement.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation less thanor equal to ±10% of that numerical value, such as less than or equal to±5%, less than or equal to ±4%, less than or equal to ±3%, less than orequal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%,less than or equal to ±0.1%, or less than or equal to ±0.05%. Forexample, two numerical values can be deemed to be “substantially” thesame or equal if a difference between the values is less than or equalto ±10% of an average of the values, such as less than or equal to ±5%,less than or equal to ±4%, less than or equal to ±3%, less than or equalto ±2%, less than or equal to ±1%, less than or equal to ±0.5%, lessthan or equal to ±0.1%, or less than or equal to ±0.05%.

Two surfaces can be deemed to be coplanar or substantially coplanar if adisplacement between the two surfaces is no greater than 5 μm, nogreater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

As used herein, the singular terms “a,” “an,” and “the” may includeplural referents unless the context clearly dictates otherwise.

As used herein, the terms “conductive,” “electrically conductive” and“electrical conductivity” refer to an ability to transport an electriccurrent. Electrically conductive materials typically indicate thosematerials that exhibit little or no opposition to the flow of anelectric current. One measure of electrical conductivity is Siemens permeter (S/m). Typically, an electrically conductive material is onehaving a conductivity greater than approximately 10⁴ S/m, such as atleast 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of amaterial can sometimes vary with temperature. Unless otherwisespecified, the electrical conductivity of a material is measured at roomtemperature.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations are not limiting. It should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of thepresent disclosure as defined by the appended claims. The illustrationsmay not be necessarily drawn to scale. There may be distinctions betweenthe artistic renditions in the present disclosure and the actualapparatus due to manufacturing processes and tolerances. There may beother embodiments of the present disclosure which are not specificallyillustrated. The specification and drawings are to be regarded asillustrative rather than restrictive. Modifications may be made to adapta particular situation, material, composition of matter, method, orprocess to the objective, spirit and scope of the present disclosure.All such modifications are intended to be within the scope of the claimsappended hereto. While the methods disclosed herein have been describedwith reference to particular operations performed in a particular order,it will be understood that these operations may be combined,sub-divided, or re-ordered to form an equivalent method withoutdeparting from the teachings of the present disclosure. Accordingly,unless specifically indicated herein, the order and grouping of theoperations are not limitations of the present disclosure.

1-27. (canceled)
 28. A wiring structure, comprising: a metal layer; anda conductive structure disposed on the metal layer and including aredistribution layer, a first barrier layer and a wetting layer, whereinthe first barrier layer is disposed between the redistribution layer andthe wetting layer, a first portion of the wetting layer is exposed fromthe metal layer to form a ball pad, and a second portion of the wettinglayer is disposed on the metal layer.
 29. The wiring structure of claim28, wherein the metal layer defines a through hole extending through themetal layer, and the first portion of the wetting layer is exposed fromthe through hole of the metal layer to form the ball pad.
 30. The wiringstructure of claim 28, wherein the metal layer is a seed layer.
 31. Thewiring structure of claim 30, wherein the seed layer includes a titaniumlayer and a copper layer.
 32. The wiring structure of claim 28, furthercomprising a second barrier layer, wherein the wetting layer is disposedbetween the first barrier layer and the second barrier layer.
 33. Thewiring structure of claim 32, wherein a thickness of the second barrierlayer is less than a thickness of the first barrier layer.
 34. Thewiring structure of claim 32, wherein the second barrier layer isdisposed on the metal layer.
 35. The wiring structure of claim 32,wherein the metal layer defines a first through hole extending throughthe metal layer, the second barrier defines a second through holeextending through the second barrier layer, the second through hole ofthe second barrier layer corresponds to the first through hole of themetal layer, and the first portion of the wetting layer is exposed fromthe first through hole of the metal layer and the second through hole ofthe second barrier layer to form the ball pad.
 36. The wiring structureof claim 35, wherein the ball pad is recessed from the wetting layer andthe second barrier layer.
 37. The wiring structure of claim 35, whereinthe first through hole of the metal layer and the second through hole ofthe second barrier layer are disposed below the ball pad.
 38. The wiringstructure of claim 28, wherein a material of the wetting layer includesgold.
 39. A conductive structure, comprising: a circuit structureincluding a plurality of metal layers, wherein the circuit structureincludes a bonding region and an extending region, an amount of metallayers of the bonding region is different from an amount of metal layersof the extending region, the bonding region includes a wetting layer anda first barrier layer disposed on the wetting layer, the extendingregion includes the wetting layer, the first barrier layer and a secondbarrier layer, the wetting layer is disposed between the first barrierlayer and the second barrier layer, and a thickness of the first barrierlayer is larger than a thickness of the second barrier layer.
 40. Theconductive structure of claim 39, wherein the bonding region isuncovered by the second barrier layer.
 41. The conductive structure ofclaim 39, further comprising a metal layer, wherein the second barrierlayer is disposed on the metal layer.
 42. The conductive structure ofclaim 41, wherein a material of the metal layer includes titanium and/orcopper.
 43. The conductive structure of claim 39, further comprising aredistribution layer disposed on the first barrier layer.
 44. Theconductive structure of claim 43, wherein a peripheral wall of theredistribution layer aligns with a peripheral wall of the circuitstructure.
 45. The conductive structure of claim 39, wherein a materialof the wetting layer includes gold.
 46. The conductive structure ofclaim 39, further comprising an electronic connecting element contactingthe wetting layer.
 47. The conductive structure of claim 46, wherein theelectronic connecting element is attached to the bonding region of thecircuit structure.